Donald Gardner has been with Intel Corporation since 1991 and is currently a principal engineer in Intel Research and also is a visiting scientist at Stanford University. He received his PhD in Electrical Engineering from Stanford University. Donald is the inventor or co-inventor of 58 patents including for inductors using high-frequency magnetic materials, reflow of copper metallization, layered aluminum metal for interconnections, and embedded ground planes. He is the recipient of a 2005 Intel Achievement Award, Intel’s top honor for outstanding accomplishments that have had significant impact on a major program. Don has published and presented over 140 electrical engineering, materials science and computer science papers in journals and conferences including several invited presentations. He has received four Best Paper and Poster awards at international conferences and over 500 authors have cited his publications. Donald has had appointments as a visiting research scientist at Hitachi Research Labs in Japan and as an instructor at Stanford University. He enjoys bringing new life to old technologies by blending them with different technologies or recent science and new materials. His current interests include magnetic materials for high-frequency inductors, silicon-based optoelectronic devices, nanostructure design and devices, and process integration.